![]() The high-k dielectric layer can be thickened without reducing the transconductance of HEMTs. For example, SiO2, Al2O3, and HfO2 have all been widely used for gate dielectric layers. Previously, several groups have attempted to solve this problem by applying the metal-insulator-semiconductor (MIS) structure. However, larger gate leakage currents in HEMTs due to surface defects and the finite barrier height of AlGaN limit the performance and reliability of devices, especially the breakdown voltage and power handling capabilities. Sci China-Phys Mech Astron, 2012, 55: 4043, doi: 10.1007/s1143-xĪlGaN/GaN high electron-mobility transistors (HEMTs) have recently emerged as attractive transistors suitable for high-power and high-frequency applications. The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT. AlGaN/GaN, MIS-HEMT, proton irradiation, trap PACS number(s): 85.30.Tv, 73.40.Qv, 77.55.+f, 61.82.Fk Citation:īi Z W, Feng Q, Zhang J C, et al. ![]() However, these increases in trap densities caused by irradiation in MIS-HEMT are less than those in HEMT, which can be attributed to the protection of the AlGaN surface by the NbAlO dielectric layer. ![]() Gate-drain conductance measurements indicated that new traps were introduced in GaN from the irradiation, and the trap densities increased from 1.18×1012 cm2eV1 to 1.82×1012 cm2eV1 in MIS-HEMTs after irradiation. It was found that the proton irradiation damage caused degradation in DC performance and a flatband voltage shift in the capacitance-voltage curve. ![]() The effects of proton irradiation on the electrical properties of NbAlO/AlGaN/GaN MIS-HEMT BI ZhiWei*, FENG Qian, ZHANG JinCheng, LÜ Ling, MAO Wei, GU WenPing, MA XiaoHua & HAO Yue* Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China Received Jaccepted Septempublished online December 15, 2011ĪlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with atomic layer deposited (ALD) NbAlO gate dielectric were investigated using 3 MeV proton irradiation at a fluence of 1015 p/cm2. SCIENCE CHINA Physics, Mechanics & Astronomy ![]()
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